Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

J. W. Shi, H. Y. Huang, J. K. Sheu, S. H. Hsieh, Y. S. Wu, Ja Yu Lu, F. H. Huang, W. C. Lai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We demonstrate a GaN-based waveguide photodiode at a wavelength of around 510 nm for plastic optical fiber communication. Compared with the performance of an Si-based photodiode in the same wavelength regime, our device can achieve better external efficiency. It also enjoys the unique advantage of monolithic integration with the GaN-based green-amber light-emitting-diode (LED). Our demonstrated photodiode exhibits high external efficiency (73%) and a 600-MHz electrical bandwidth. Under forward bias, this device can also serve as a transmitter (LED), and the measured optical center wavelength is around 515 nm with a 70-MHz electrical bandwidth.

Original languageEnglish
Pages (from-to)283-285
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number1
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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