Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

J. W. Shi, H. Y. Huang, Jinn-Kong Sheu, S. H. Hsieh, Y. S. Wu, Ja-Yu Lu, F. H. Huang, Wei-Chi Lai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We demonstrate a GaN-based waveguide photodiode at a wavelength of around 510 nm for plastic optical fiber communication. Compared with the performance of an Si-based photodiode in the same wavelength regime, our device can achieve better external efficiency. It also enjoys the unique advantage of monolithic integration with the GaN-based green-amber light-emitting-diode (LED). Our demonstrated photodiode exhibits high external efficiency (73%) and a 600-MHz electrical bandwidth. Under forward bias, this device can also serve as a transmitter (LED), and the measured optical center wavelength is around 515 nm with a 70-MHz electrical bandwidth.

Original languageEnglish
Pages (from-to)283-285
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number1
DOIs
Publication statusPublished - 2006 Dec 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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