Nitride-based QD LEDs

Shoou-Jinn Chang, Y. K. Su, L. W. Ji, C. S. Chang, L. W. Wu, Wei-Chi Lai, T. H. Fang, K. T. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages81-82
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 2003 Dec 102003 Dec 12

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period03-12-1003-12-12

Fingerprint

Electroluminescence
Nitrides
Semiconductor quantum dots
Light emitting diodes
Semiconductor quantum wells

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chang, S-J., Su, Y. K., Ji, L. W., Chang, C. S., Wu, L. W., Lai, W-C., ... Lam, K. T. (2003). Nitride-based QD LEDs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 81-82). [1272006] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272006
Chang, Shoou-Jinn ; Su, Y. K. ; Ji, L. W. ; Chang, C. S. ; Wu, L. W. ; Lai, Wei-Chi ; Fang, T. H. ; Lam, K. T. / Nitride-based QD LEDs. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 81-82 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).
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title = "Nitride-based QD LEDs",
abstract = "InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.",
author = "Shoou-Jinn Chang and Su, {Y. K.} and Ji, {L. W.} and Chang, {C. S.} and Wu, {L. W.} and Wei-Chi Lai and Fang, {T. H.} and Lam, {K. T.}",
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Chang, S-J, Su, YK, Ji, LW, Chang, CS, Wu, LW, Lai, W-C, Fang, TH & Lam, KT 2003, Nitride-based QD LEDs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272006, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 81-82, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03-12-10. https://doi.org/10.1109/ISDRS.2003.1272006

Nitride-based QD LEDs. / Chang, Shoou-Jinn; Su, Y. K.; Ji, L. W.; Chang, C. S.; Wu, L. W.; Lai, Wei-Chi; Fang, T. H.; Lam, K. T.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 81-82 1272006 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Fang, T. H.

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N2 - InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

AB - InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

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Chang S-J, Su YK, Ji LW, Chang CS, Wu LW, Lai W-C et al. Nitride-based QD LEDs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 81-82. 1272006. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). https://doi.org/10.1109/ISDRS.2003.1272006