Nitride-based QD LEDs

Shoou-Jinn Chang, Y. K. Su, L. W. Ji, C. S. Chang, L. W. Wu, Wei-Chi Lai, T. H. Fang, K. T. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN/GaN blue light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method, as shown in fig. 1. As shown in fig. 2, we have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. As shown in fig 3, 4 and 5, it was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs strengthens the band-filling effect as the injection current increases.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages81-82
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 2003 Dec 102003 Dec 12

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period03-12-1003-12-12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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