Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng, S. C. Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0nm/mm for GaN, Al0.175Ga0.825N, Al 0.23Ga0.77N, and Al0.4Ga0.6N, respectively. It was also found that we could achieve a high Al 0.175Ga0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated ID larger than 850mA/mm and a maximum g m about 163mS/mm from PEC wet etched HFET with a 0.5μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.

Original languageEnglish
Pages (from-to)260-264
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume110
Issue number3
DOIs
Publication statusPublished - 2004 Jul 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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