Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

Y. K. Su; S. J. Chang; T. M. Kuan; C. H. Ko; J. B. Webb; W. H. Lan; Y. T. Cherng; S. C. Chen

doi:10.1016/j.mseb.2004.02.006

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng, S. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0nm/mm for GaN, Al_0.175Ga_0.825N, Al _0.23Ga_0.77N, and Al_0.4Ga_0.6N, respectively. It was also found that we could achieve a high Al _0.175Ga_0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I_D larger than 850mA/mm and a maximum g _m about 163mS/mm from PEC wet etched HFET with a 0.5μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.

Original language	English
Pages (from-to)	260-264
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2004.02.006
Publication status	Published - 2004 Jul 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.02.006

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@article{8de15b728e4c46fe88b5051d443d3962,

title = "Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching",

abstract = "Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0nm/mm for GaN, Al0.175Ga0.825N, Al 0.23Ga0.77N, and Al0.4Ga0.6N, respectively. It was also found that we could achieve a high Al 0.175Ga0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated ID larger than 850mA/mm and a maximum g m about 163mS/mm from PEC wet etched HFET with a 0.5μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.",

author = "Su, {Y. K.} and Chang, {S. J.} and Kuan, {T. M.} and Ko, {C. H.} and Webb, {J. B.} and Lan, {W. H.} and Cherng, {Y. T.} and Chen, {S. C.}",

note = "Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005.",

year = "2004",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2004.02.006",

language = "English",

volume = "110",

pages = "260--264",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

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TY - JOUR

T1 - Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

AU - Su, Y. K.

AU - Chang, S. J.

AU - Kuan, T. M.

AU - Ko, C. H.

AU - Webb, J. B.

AU - Lan, W. H.

AU - Cherng, Y. T.

AU - Chen, S. C.

N1 - Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005.

PY - 2004/7/25

Y1 - 2004/7/25

N2 - Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0nm/mm for GaN, Al0.175Ga0.825N, Al 0.23Ga0.77N, and Al0.4Ga0.6N, respectively. It was also found that we could achieve a high Al 0.175Ga0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated ID larger than 850mA/mm and a maximum g m about 163mS/mm from PEC wet etched HFET with a 0.5μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.

AB - Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0nm/mm for GaN, Al0.175Ga0.825N, Al 0.23Ga0.77N, and Al0.4Ga0.6N, respectively. It was also found that we could achieve a high Al 0.175Ga0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated ID larger than 850mA/mm and a maximum g m about 163mS/mm from PEC wet etched HFET with a 0.5μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.

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U2 - 10.1016/j.mseb.2004.02.006

DO - 10.1016/j.mseb.2004.02.006

M3 - Article

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SN - 0921-5107

VL - 110

SP - 260

EP - 264

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

Abstract

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