Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

Shoou-Jinn Chang, C. L. Yu, C. H. Chen, P. C. Chang, K. C. Huang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.

Original languageEnglish
Pages (from-to)637-640
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 22

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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