Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

S. J. Chang; C. L. Yu; C. H. Chen; P. C. Chang; K. C. Huang

doi:10.1116/1.2162560

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, K. C. Huang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.

Original language	English
Pages (from-to)	637-640
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	24
Issue number	3
DOIs	https://doi.org/10.1116/1.2162560
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes",

abstract = "Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.",

author = "Chang, {S. J.} and Yu, {C. L.} and Chen, {C. H.} and Chang, {P. C.} and Huang, {K. C.}",

note = "Funding Information: This work was supported by National Science Council of Taiwan under Contract No. NSC93-2215-E-230-001. This work was also supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.",

year = "2006",

doi = "10.1116/1.2162560",

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pages = "637--640",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

AU - Chang, S. J.

AU - Yu, C. L.

AU - Chen, C. H.

AU - Chang, P. C.

AU - Huang, K. C.

N1 - Funding Information: This work was supported by National Science Council of Taiwan under Contract No. NSC93-2215-E-230-001. This work was also supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.

PY - 2006

Y1 - 2006

N2 - Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.

AB - Nitride-based ultraviolet (UV) metal-semiconductor-metal photodetectors (PDs) with low-temperature (LT) GaN cap layers and IrPt contact electrodes have been fabricated. It was found that both IrPt contact electrodes and LT GaN cap layers could effectively suppress the dark current of the PDs. We also achieved larger photocurrent to dark current contrast ratio and larger UV to visible rejection ratio from the PDs with LT GaN cap layers and IrPt contact electrodes.

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ER -

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and IrPt contact electrodes

Abstract

All Science Journal Classification (ASJC) codes

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