Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

J. K. Sheu; C. J. Kao; M. L. Lee; W. C. Lai; L. S. Yeh; G. C. Chi; S. J. Chang; Y. K. Su; J. M. Tsai

doi:10.1007/s11664-003-0165-4

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su, J. M. Tsai

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.

Original language	English
Pages (from-to)	400-402
Number of pages	3
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0165-4
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-003-0165-4

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@article{8af8465c27ba4db199dbd575bf52eed0,

title = "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer",

abstract = "The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.",

author = "Sheu, {J. K.} and Kao, {C. J.} and Lee, {M. L.} and Lai, {W. C.} and Yeh, {L. S.} and Chi, {G. C.} and Chang, {S. J.} and Su, {Y. K.} and Tsai, {J. M.}",

note = "Funding Information: The authors acknowledge the financial support from the National Science Council under Research Grant Nos. NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0165-4",

language = "English",

volume = "32",

pages = "400--402",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

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T1 - Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

AU - Sheu, J. K.

AU - Kao, C. J.

AU - Lee, M. L.

AU - Lai, W. C.

AU - Yeh, L. S.

AU - Chi, G. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Tsai, J. M.

N1 - Funding Information: The authors acknowledge the financial support from the National Science Council under Research Grant Nos. NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.

PY - 2003/5

Y1 - 2003/5

N2 - The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.

AB - The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.

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U2 - 10.1007/s11664-003-0165-4

DO - 10.1007/s11664-003-0165-4

M3 - Article

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SN - 0361-5235

VL - 32

SP - 400

EP - 402

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

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All Science Journal Classification (ASJC) codes

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