Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su, J. M. Tsai

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10 Citations (Scopus)


The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.

Original languageEnglish
Pages (from-to)400-402
Number of pages3
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2003 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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