Nitride light-emitting diodes grown on Si (111) using a TiN template

N. C. Chen, W. C. Lien, Chuan-Feng Shih, P. H. Chang, T. W. Wang, M. C. Wu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

Original languageEnglish
Article number191110
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006 May 23

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nitrides
light emitting diodes
templates
reflectors
x ray diffraction
reflectance
transmission electron microscopy
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, N. C., Lien, W. C., Shih, C-F., Chang, P. H., Wang, T. W., & Wu, M. C. (2006). Nitride light-emitting diodes grown on Si (111) using a TiN template. Applied Physics Letters, 88(19), [191110]. https://doi.org/10.1063/1.2202389
Chen, N. C. ; Lien, W. C. ; Shih, Chuan-Feng ; Chang, P. H. ; Wang, T. W. ; Wu, M. C. / Nitride light-emitting diodes grown on Si (111) using a TiN template. In: Applied Physics Letters. 2006 ; Vol. 88, No. 19.
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Nitride light-emitting diodes grown on Si (111) using a TiN template. / Chen, N. C.; Lien, W. C.; Shih, Chuan-Feng; Chang, P. H.; Wang, T. W.; Wu, M. C.

In: Applied Physics Letters, Vol. 88, No. 19, 191110, 23.05.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nitride light-emitting diodes grown on Si (111) using a TiN template

AU - Chen, N. C.

AU - Lien, W. C.

AU - Shih, Chuan-Feng

AU - Chang, P. H.

AU - Wang, T. W.

AU - Wu, M. C.

PY - 2006/5/23

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AB - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

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