Nitrogen plasma treatment of a TiO2 layer for MIS ohmic contact on n-type Ge substrate

Jheng Ci Yang, Hsin Fu Huang, Jyun Han Li, Yao Jen Lee, Yeong Her Wang

Research output: Contribution to journalArticle

Abstract

This work investigates the characteristics of ohmic contacts on an n-type Ge by combining TiO2 with different metals. Metal-insulator-semiconductor (MIS) structures easily crystallize after post-metal annealing (PMA), with the subsequent characteristics dependent on the insulator thickness and process temperature. If 2 nm thick TiO2 is doped with nitrogen, there is no obvious difference in the current-voltage characteristics before/after PMA. The transmission electron microscope (TEM) analysis also verified that a lightly nitrogen-doped process is useful in suppressing the crystalline transition. In this study, the tungsten (W) contact showed the best thermal stability. Therefore, this technique could be effective in suppressing TiO2 crystallization with improved thermal stability.

Original languageEnglish
Article number108996
JournalVacuum
Volume171
DOIs
Publication statusPublished - 2020 Jan

Fingerprint

Nitrogen plasma
nitrogen plasma
Ohmic contacts
MIS (semiconductors)
electric contacts
Metals
Semiconductor materials
thermal stability
Substrates
metals
nitrogen
annealing
Thermodynamic stability
Nitrogen
Annealing
Tungsten
tungsten
Current voltage characteristics
Crystallization
electron microscopes

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Yang, Jheng Ci ; Huang, Hsin Fu ; Li, Jyun Han ; Lee, Yao Jen ; Wang, Yeong Her. / Nitrogen plasma treatment of a TiO2 layer for MIS ohmic contact on n-type Ge substrate. In: Vacuum. 2020 ; Vol. 171.
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Nitrogen plasma treatment of a TiO2 layer for MIS ohmic contact on n-type Ge substrate. / Yang, Jheng Ci; Huang, Hsin Fu; Li, Jyun Han; Lee, Yao Jen; Wang, Yeong Her.

In: Vacuum, Vol. 171, 108996, 01.2020.

Research output: Contribution to journalArticle

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