Low frequency noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) with photo-chemical vapor deposition (photo-CVD) SiO2 gate oxide was investigated as functions of gate bias (from Vgs = -6 to 4V) both in the linear (Vds = 3 V) and saturation (Vds = 12 V) regions. In the linear region, it was found the measured noise spectra were fitted well by the 1/f law up to 1 kHz. The normalized noise power density of the MOS-HFETs was proportional to V gs-1 when -4 < Vgs < 0 V, and was independent of the gate voltage when 0 < Vgs < 4 V. The Hooge's coefficient α was estimated to be around 10-3. In the saturation region, it was found that the measured noise power density decreased monotonically with the increase of gate voltage.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2006 Apr 25|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)