Noise analysis of nitride-based metal-oxide-semiconductor heterostructure field effect transistors with photo-chemical vapor deposition SiO2 gate oxide in the linear and saturation regions

Yu Zung Chiou, Yan Kuin Su, Jeng Gong, Shoou Jinn Chang, Chun Kai Wang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Low frequency noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) with photo-chemical vapor deposition (photo-CVD) SiO2 gate oxide was investigated as functions of gate bias (from Vgs = -6 to 4V) both in the linear (Vds = 3 V) and saturation (Vds = 12 V) regions. In the linear region, it was found the measured noise spectra were fitted well by the 1/f law up to 1 kHz. The normalized noise power density of the MOS-HFETs was proportional to V gs-1 when -4 < Vgs < 0 V, and was independent of the gate voltage when 0 < Vgs < 4 V. The Hooge's coefficient α was estimated to be around 10-3. In the saturation region, it was found that the measured noise power density decreased monotonically with the increase of gate voltage.

Original languageEnglish
Pages (from-to)3405-3409
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Noise analysis of nitride-based metal-oxide-semiconductor heterostructure field effect transistors with photo-chemical vapor deposition SiO<sub>2</sub> gate oxide in the linear and saturation regions'. Together they form a unique fingerprint.

Cite this