We report the growth of InGaAs-based epitaxial layers by metallorganic chemical vapor deposition (MOCVD) and the fabrication of 60 μm diameter InGaAs PIN photodiode. With -5 V applied bias, it was found that reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. It was also found that measured 3 dB bandwidth for the packaged photodiode was 3.83 GHz when biased at -5 V. For a given bandwidth of 1 kHz and a given bias of -5 V, it was found that the noise-equivalent-powers of our InGaAs PIN photodiodes were 4.53× 10-14 W at 1.31 μm and 2.95× 10-14 W at 1.55 μm, which correspond to normalize detectivity values of 3.69× 1012 cm Hz0.5 W-1 at 1.31 μm and 5.67× 1012 cm Hz0.5 W-1 at 1.55 μm.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry