In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10–7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10–11 W and 6.17 x 109 cmHz0.5 W-1, respectively.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering