Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/Glass templates

Chien Yuan Lu; Sheng Po Chang; Shoou Jinn Chang; Che Fu Kuo; Hong Ming Chang

doi:10.1109/JSEN.2007.896567

Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/Glass templates

Chien Yuan Lu, Sheng Po Chang, Shoou Jinn Chang, Che Fu Kuo, Hong Ming Chang

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10^–7 A/cm². It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10^–11 W and 6.17 x 10⁹ cmHz^0.5 W^-1, respectively.

Original language	English
Pages (from-to)	1020-1024
Number of pages	5
Journal	IEEE Sensors Journal
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/JSEN.2007.896567
Publication status	Published - 2007 Jul 7

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/Glass templates",

abstract = "In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10–7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10–11 W and 6.17 x 109 cmHz0.5 W-1, respectively.",

author = "Lu, {Chien Yuan} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Kuo, {Che Fu} and Chang, {Hong Ming}",

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AU - Lu, Chien Yuan

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Kuo, Che Fu

AU - Chang, Hong Ming

PY - 2007/7/7

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N2 - In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10–7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10–11 W and 6.17 x 109 cmHz0.5 W-1, respectively.

AB - In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10–7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10–11 W and 6.17 x 109 cmHz0.5 W-1, respectively.

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Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/Glass templates

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