Abstract
In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10–7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10–11 W and 6.17 x 109 cmHz0.5 W-1, respectively.
Original language | English |
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Pages (from-to) | 1020-1024 |
Number of pages | 5 |
Journal | IEEE Sensors Journal |
Volume | 7 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 Jul 7 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Electrical and Electronic Engineering