Noise properties of low-temperature-grown co-doped ZnO nanorods as ultraviolet photodetectors

Chung Wei Liu, Shoou Jinn Chang, Chih Hung Hsiao, Kuang Yao Lo, Tsung Hsien Kao, Bo Chin Wang, Sheng Joue Young, Kai Shiang Tsai, San Lein Wu

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10 Citations (Scopus)

Abstract

The growth of vertically aligned cobalt-doped ZnO (Co-ZnO) nanorods on a glass substrate using a low-temperature hydrothermal method is reported. A Co-ZnO nanorod metal-semiconductor-metal ultraviolet photodetector (PD) was also fabricated. The ratio of UV-to-visible rejection of the fabricated PD was approximately 11700 when biased at 1 V with a sharp cutoff at 380 nm. With an incident light wavelength of 380 nm and an applied bias of 1 V, the measured responsivity of the PD was found to be 19.8 A/W. Furthermore, the dark noise equivalent power (NEP) and photo NEP of the fabricated Co-ZnO nanorod MSM PD were 1.3 × 10-13 and 1.8 × 10 -11W at the corresponding dark detectivities (D*) and photo D* of 1.1 × 1014 and 7.3 × 10 11 cm·Hz0. W-1, respectively.

Original languageEnglish
Article number6777340
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number6
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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