Abstract
ZnO nanowalls are rapidly grown on a glass substrate using a low-temperature thermal evaporation method, without the use of a catalyst and the pre-deposition of a ZnO seed layer on the substrate. Most of the ZnO nanowalls are grown vertically and are about 70-200-nm thick and 2-μm long. The room-temperature photoluminescence spectra show a strong intrinsic ultraviolet (UV) emission and a weak defectrelated orange emission. The ZnO nanowall UV sensor is highly sensitive to UV light, with an excellent UV-to-visible ratio and good flicker noise characteristics. This shows the strong potential of ZnO nanowalls for use in UV sensors. At an applied bias of 2 V, the noise equivalent power and the normalized detectivity of the ZnO nanowall UV sensor are 1.87 × 10-10 W and 3.38 × 10 9 cm·Hz0.5·W-1, respectively..
Original language | English |
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Article number | 6384664 |
Pages (from-to) | 213-216 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 25 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2013 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering