Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Liang Jyi Yan; Cheng Huang Kuo; Jinn Kong Sheu; Ming Lun Lee; Wei Chun Tseng

doi:10.1016/j.jallcom.2011.11.106

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Liang Jyi Yan, Cheng Huang Kuo, Jinn Kong Sheu, Ming Lun Lee, Wei Chun Tseng

Department of Photonics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ _c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 ^-4 Ω cm ² and 2.4 × 10 ^-5 Ω cm ², respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ _c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ _c of non-alloyed Cr/Au Ohmic contacts to GaN films.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	516
DOIs	https://doi.org/10.1016/j.jallcom.2011.11.106
Publication status	Published - 2012 Mar 5

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2011.11.106

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title = "Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN",

abstract = "Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.",

author = "Yan, {Liang Jyi} and Kuo, {Cheng Huang} and Sheu, {Jinn Kong} and Lee, {Ming Lun} and Tseng, {Wei Chun}",

note = "Funding Information: The authors would like to acknowledge the support from the Bureau of Energy, Ministry of Economic Affairs of Taiwan, R.O.C. through grant no. 99-D0204-6 is appreciated. The authors would also like to acknowledge the National Science Council for the financial support of the research grant nos. 100-2112-M-006 -011 -MY3 , 98-2221-E-218-005-MY3 and 100-3113-E-006-015 .",

year = "2012",

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day = "5",

doi = "10.1016/j.jallcom.2011.11.106",

language = "English",

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pages = "38--40",

journal = "Journal of Alloys and Compounds",

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T1 - Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

AU - Yan, Liang Jyi

AU - Kuo, Cheng Huang

AU - Sheu, Jinn Kong

AU - Lee, Ming Lun

AU - Tseng, Wei Chun

N1 - Funding Information: The authors would like to acknowledge the support from the Bureau of Energy, Ministry of Economic Affairs of Taiwan, R.O.C. through grant no. 99-D0204-6 is appreciated. The authors would also like to acknowledge the National Science Council for the financial support of the research grant nos. 100-2112-M-006 -011 -MY3 , 98-2221-E-218-005-MY3 and 100-3113-E-006-015 .

PY - 2012/3/5

Y1 - 2012/3/5

N2 - Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.

AB - Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.

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SN - 0925-8388

VL - 516

SP - 38

EP - 40

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Abstract

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