Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Min Hao Hong, Chun Wei Chang, Dung Ching Perng, Kuan Ching Lee, Shiu Ko Jang Jian, Wei Fan Lee, Yen Chuang, Yu Ta Fan, Woo Sik Yoo

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3 Citations (Scopus)

Abstract

B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.

Original languageEnglish
Article number032150
JournalAIP Advances
Volume2
Issue number3
DOIs
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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