Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Min Hao Hong; Chun Wei Chang; Dung Ching Perng; Kuan Ching Lee; Shiu Ko Jang Jian; Wei Fan Lee; Yen Chuang; Yu Ta Fan; Woo Sik Yoo

doi:10.1063/1.4748294

Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Min Hao Hong, Chun Wei Chang, Dung Ching Perng, Kuan Ching Lee, Shiu Ko Jang Jian, Wei Fan Lee, Yen Chuang, Yu Ta Fan, Woo Sik Yoo

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

B-doped, thin Si_1-xGe_x bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si_1-xGe_x bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si_1-xGe_x bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si_1-xGe_x bi-layers was observed in the early stages of thermal diffusion.

Original language	English
Article number	032150
Journal	AIP Advances
Volume	2
Issue number	3
DOIs	https://doi.org/10.1063/1.4748294
Publication status	Published - 2012 Sept

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4748294

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Hong, M. H., Chang, C. W., Perng, D. C., Lee, K. C., Jian, S. K. J., Lee, W. F., Chuang, Y., Fan, Y. T., & Yoo, W. S. (2012). Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy. AIP Advances, 2(3), Article 032150. https://doi.org/10.1063/1.4748294

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title = "Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy",

abstract = "B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.",

author = "Hong, {Min Hao} and Chang, {Chun Wei} and Perng, {Dung Ching} and Lee, {Kuan Ching} and Jian, {Shiu Ko Jang} and Lee, {Wei Fan} and Yen Chuang and Fan, {Yu Ta} and Yoo, {Woo Sik}",

year = "2012",

month = sep,

doi = "10.1063/1.4748294",

language = "English",

volume = "2",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "3",

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TY - JOUR

T1 - Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AU - Hong, Min Hao

AU - Chang, Chun Wei

AU - Perng, Dung Ching

AU - Lee, Kuan Ching

AU - Jian, Shiu Ko Jang

AU - Lee, Wei Fan

AU - Chuang, Yen

AU - Fan, Yu Ta

AU - Yoo, Woo Sik

PY - 2012/9

Y1 - 2012/9

N2 - B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.

AB - B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.

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Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

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