Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Min Hao Hong; Chun Wei Chang; Dung Ching Perng; Kuan Ching Lee; Shiu Ko Jang Jian; Wei Fan Lee; Yen Chuang; Yu Ta Fan; Woo Sik Yoo

doi:10.1063/1.4748294

Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Min Hao Hong
, Chun Wei Chang
, Dung Ching Perng
, Kuan Ching Lee
, Shiu Ko Jang Jian
, Wei Fan Lee
, Yen Chuang
, Yu Ta Fan
, Woo Sik Yoo

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

B-doped, thin Si_1-xGe_x bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si_1-xGe_x bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si_1-xGe_x bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si_1-xGe_x bi-layers was observed in the early stages of thermal diffusion.

Original language	English
Article number	032150
Journal	AIP Advances
Volume	2
Issue number	3
DOIs	https://doi.org/10.1063/1.4748294
Publication status	Published - 2012 Sept

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4748294

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Hong, M. H., Chang, C. W., Perng, D. C., Lee, K. C., Jian, S. K. J., Lee, W. F., Chuang, Y., Fan, Y. T., & Yoo, W. S. (2012). Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy. AIP Advances, 2(3), Article 032150. https://doi.org/10.1063/1.4748294

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title = "Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy",

abstract = "B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.",

author = "Hong, \{Min Hao\} and Chang, \{Chun Wei\} and Perng, \{Dung Ching\} and Lee, \{Kuan Ching\} and Jian, \{Shiu Ko Jang\} and Lee, \{Wei Fan\} and Yen Chuang and Fan, \{Yu Ta\} and Yoo, \{Woo Sik\}",

year = "2012",

month = sep,

doi = "10.1063/1.4748294",

language = "English",

volume = "2",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si 1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AU - Hong, Min Hao

AU - Chang, Chun Wei

AU - Perng, Dung Ching

AU - Lee, Kuan Ching

AU - Jian, Shiu Ko Jang

AU - Lee, Wei Fan

AU - Chuang, Yen

AU - Fan, Yu Ta

AU - Yoo, Woo Sik

PY - 2012/9

Y1 - 2012/9

N2 - B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.

AB - B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion.

UR - https://www.scopus.com/pages/publications/84885073783

UR - https://www.scopus.com/pages/publications/84885073783#tab=citedBy

U2 - 10.1063/1.4748294

DO - 10.1063/1.4748294

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AN - SCOPUS:84885073783

SN - 2158-3226

VL - 2

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 032150

ER -

Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si _1-xGe_x bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

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