TY - JOUR
T1 - Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional
AU - Jin, Jinshuang
AU - Tu, Matisse Wei Yuan
AU - Zhang, Wei Min
AU - Yan, Yi Jing
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/8/6
Y1 - 2010/8/6
N2 - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
AB - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
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U2 - 10.1088/1367-2630/12/8/083013
DO - 10.1088/1367-2630/12/8/083013
M3 - Article
AN - SCOPUS:77956565340
VL - 12
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
M1 - 083013
ER -