Abstract
In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
| Original language | English |
|---|---|
| Article number | 083013 |
| Journal | New Journal of Physics |
| Volume | 12 |
| DOIs | |
| Publication status | Published - 2010 Aug 6 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional. / Jin, Jinshuang; Tu, Matisse Wei Yuan; Zhang, Wei-Min; Yan, Yi Jing.
In: New Journal of Physics, Vol. 12, 083013, 06.08.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional
AU - Jin, Jinshuang
AU - Tu, Matisse Wei Yuan
AU - Zhang, Wei-Min
AU - Yan, Yi Jing
PY - 2010/8/6
Y1 - 2010/8/6
N2 - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
AB - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
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U2 - 10.1088/1367-2630/12/8/083013
DO - 10.1088/1367-2630/12/8/083013
M3 - Article
VL - 12
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
M1 - 083013
ER -