Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional

Jinshuang Jin, Matisse Wei Yuan Tu, Wei-Min Zhang, Yi Jing Yan

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.

Original languageEnglish
Article number083013
JournalNew Journal of Physics
Volume12
DOIs
Publication statusPublished - 2010 Aug 6

Fingerprint

quantum theory
single electron transistors
transport theory
electric potential
electrons
dissipation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{92cd185e28aa49f5ac262a1617d6aee9,
title = "Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional",
abstract = "In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.",
author = "Jinshuang Jin and Tu, {Matisse Wei Yuan} and Wei-Min Zhang and Yan, {Yi Jing}",
year = "2010",
month = "8",
day = "6",
doi = "10.1088/1367-2630/12/8/083013",
language = "English",
volume = "12",
journal = "New Journal of Physics",
issn = "1367-2630",
publisher = "IOP Publishing Ltd.",

}

Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional. / Jin, Jinshuang; Tu, Matisse Wei Yuan; Zhang, Wei-Min; Yan, Yi Jing.

In: New Journal of Physics, Vol. 12, 083013, 06.08.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Non-equilibrium quantum theory for nanodevices based on the Feynman-Vernon influence functional

AU - Jin, Jinshuang

AU - Tu, Matisse Wei Yuan

AU - Zhang, Wei-Min

AU - Yan, Yi Jing

PY - 2010/8/6

Y1 - 2010/8/6

N2 - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.

AB - In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.

UR - http://www.scopus.com/inward/record.url?scp=77956565340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956565340&partnerID=8YFLogxK

U2 - 10.1088/1367-2630/12/8/083013

DO - 10.1088/1367-2630/12/8/083013

M3 - Article

VL - 12

JO - New Journal of Physics

JF - New Journal of Physics

SN - 1367-2630

M1 - 083013

ER -