Non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by room temperature electromigration

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Abstract

The non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by electromigration was investigated, for the first time, under room temperature. The sub-micron dimension solder interconnect was fabricated using a magnetron sputtering technique. The athermal electromigration force, rather than the Joule heating, induced a net Cu diffusion flux across the cathode Cu/Sn interface toward the Sn matrix (along the electron flow direction). The accumulation of Cu atoms formed meta-stable supersaturation of Cu in Sn. A local distorted lattice structures was formed as evidenced by spherical aberration corrected scanning transmission electron microscope. The Cu supersaturation behavior was governed by grain boundary diffusion in the polycrystalline Cu electrode and interstitial diffusion in the single crystal Sn matrix. The extent of supersaturation in the metal matrix is affected by electromigration period and geometrical (cathode/anode electrode) parameter.

Original languageEnglish
Pages (from-to)336-344
Number of pages9
JournalJournal of Alloys and Compounds
Volume789
DOIs
Publication statusPublished - 2019 Jun 15

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Electromigration
Supersaturation
Cathodes
Temperature
Electrodes
Joule heating
Aberrations
Soldering alloys
Magnetron sputtering
Anodes
Grain boundaries
Electron microscopes
Metals
Single crystals
Fluxes
Scanning
Atoms
Electrons

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by room temperature electromigration",
abstract = "The non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by electromigration was investigated, for the first time, under room temperature. The sub-micron dimension solder interconnect was fabricated using a magnetron sputtering technique. The athermal electromigration force, rather than the Joule heating, induced a net Cu diffusion flux across the cathode Cu/Sn interface toward the Sn matrix (along the electron flow direction). The accumulation of Cu atoms formed meta-stable supersaturation of Cu in Sn. A local distorted lattice structures was formed as evidenced by spherical aberration corrected scanning transmission electron microscope. The Cu supersaturation behavior was governed by grain boundary diffusion in the polycrystalline Cu electrode and interstitial diffusion in the single crystal Sn matrix. The extent of supersaturation in the metal matrix is affected by electromigration period and geometrical (cathode/anode electrode) parameter.",
author = "Liang, {Chien Lung} and Lin, {Kwang Lung}",
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AU - Liang, Chien Lung

AU - Lin, Kwang Lung

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N2 - The non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by electromigration was investigated, for the first time, under room temperature. The sub-micron dimension solder interconnect was fabricated using a magnetron sputtering technique. The athermal electromigration force, rather than the Joule heating, induced a net Cu diffusion flux across the cathode Cu/Sn interface toward the Sn matrix (along the electron flow direction). The accumulation of Cu atoms formed meta-stable supersaturation of Cu in Sn. A local distorted lattice structures was formed as evidenced by spherical aberration corrected scanning transmission electron microscope. The Cu supersaturation behavior was governed by grain boundary diffusion in the polycrystalline Cu electrode and interstitial diffusion in the single crystal Sn matrix. The extent of supersaturation in the metal matrix is affected by electromigration period and geometrical (cathode/anode electrode) parameter.

AB - The non-equilibrium supersaturation behavior in a Cu/Sn/Cu interconnect induced by electromigration was investigated, for the first time, under room temperature. The sub-micron dimension solder interconnect was fabricated using a magnetron sputtering technique. The athermal electromigration force, rather than the Joule heating, induced a net Cu diffusion flux across the cathode Cu/Sn interface toward the Sn matrix (along the electron flow direction). The accumulation of Cu atoms formed meta-stable supersaturation of Cu in Sn. A local distorted lattice structures was formed as evidenced by spherical aberration corrected scanning transmission electron microscope. The Cu supersaturation behavior was governed by grain boundary diffusion in the polycrystalline Cu electrode and interstitial diffusion in the single crystal Sn matrix. The extent of supersaturation in the metal matrix is affected by electromigration period and geometrical (cathode/anode electrode) parameter.

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