Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams

S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai, S. J. Chang

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

This study proposes a new approach to fabrication of a high-aspect-ratio InGaN/GaN multiple quantum well nanopillar array. This fabrication technique utilizes focused ion beam milling with modified beam-shape tuning technology. The samples used in this work have a light-emitting diode (LED) structure grown by metal-organic chemical-vapour deposition. The modified beam-shape tuning was performed by simultaneously stigmating and defocusing the ion beam. The structural and optical properties of the ion-beam-milled areas were examined by high resolution transmission electron microscopy and cathodoluminescence (CL). Typical nanopillars have diameters of about 100-150 nm and heights of about 600-1000 nm. The corresponding CL spectrum at room temperature revealed the main emission to be approximately 2.98 eV, and it showed a blue shift of about 35 meV compared to as-grown samples. A maskless, site-controlled approach to the fabrication of nano-LEDs was demonstrated in this work.

Original languageEnglish
Pages (from-to)2186-2188
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sept 162007 Sept 21

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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