Non-ohmic behavior of carrier transport in highly disordered graphene

Shun Tsung Lo; Chiashain Chuang; R. K. Puddy; T. M. Chen; C. G. Smith; C. T. Liang

doi:10.1088/0957-4484/24/16/165201

Non-ohmic behavior of carrier transport in highly disordered graphene

Shun Tsung Lo, Chiashain Chuang, R. K. Puddy, T. M. Chen, C. G. Smith, C. T. Liang

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, V_sd, we are able to study the current-voltage relation I-V_sd of our device. With increasing V_sd, a crossover from the linear I-V_sd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small V_sd occurs in the presence of high electric field and perpendicular magnetic field.

Original language	English
Article number	165201
Journal	Nanotechnology
Volume	24
Issue number	16
DOIs	https://doi.org/10.1088/0957-4484/24/16/165201
Publication status	Published - 2013 Apr 26

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/24/16/165201

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title = "Non-ohmic behavior of carrier transport in highly disordered graphene",

abstract = "We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.",

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AU - Lo, Shun Tsung

AU - Chuang, Chiashain

AU - Puddy, R. K.

AU - Chen, T. M.

AU - Smith, C. G.

AU - Liang, C. T.

PY - 2013/4/26

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N2 - We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.

AB - We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.

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Non-ohmic behavior of carrier transport in highly disordered graphene

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