Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

Sung Min Kim; Sunae Seo; Emil B. Song; David H. Seo; Hankyu Seok; Kang L. Wang

Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

Sung Min Kim, Sunae Seo, Emil B. Song, David H. Seo, Hankyu Seok, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.

Original language	English
Title of host publication	2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages	118-119
Number of pages	2
Publication status	Published - 2011
Event	2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan Duration: 2011 Jun 14 → 2011 Jun 16

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2011 Symposium on VLSI Technology, VLSIT 2011
Country/Territory	Japan
City	Kyoto
Period	11-06-14 → 11-06-16

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@inproceedings{fca7113c5d2d4686829d227eaa5b3568,

title = "Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages",

abstract = "A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.",

author = "Kim, {Sung Min} and Sunae Seo and Song, {Emil B.} and Seo, {David H.} and Hankyu Seok and Wang, {Kang L.}",

year = "2011",

language = "English",

isbn = "9784863481640",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "118--119",

booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",

}

Kim, SM, Seo, S, Song, EB, Seo, DH, Seok, H & Wang, KL 2011, Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages. in 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers., 5984668, Digest of Technical Papers - Symposium on VLSI Technology, pp. 118-119, 2011 Symposium on VLSI Technology, VLSIT 2011, Kyoto, Japan, 11-06-14.

Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages. / Kim, Sung Min; Seo, Sunae; Song, Emil B. et al.
2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers. 2011. p. 118-119 5984668 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

AU - Kim, Sung Min

AU - Seo, Sunae

AU - Song, Emil B.

AU - Seo, David H.

AU - Seok, Hankyu

AU - Wang, Kang L.

PY - 2011

Y1 - 2011

N2 - A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.

AB - A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.

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M3 - Conference contribution

AN - SCOPUS:80052653910

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T3 - Digest of Technical Papers - Symposium on VLSI Technology

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EP - 119

BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers

T2 - 2011 Symposium on VLSI Technology, VLSIT 2011

Y2 - 14 June 2011 through 16 June 2011

ER -

Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

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