TY - GEN
T1 - Non-volatile graphene channel memory (NVGM) for flexible electronics
AU - Kim, Sung Min
AU - Seo, Sunae
AU - Song, Emil B.
AU - Seo, David H.
AU - Seok, Hankyu
AU - Wang, Kang L.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - A non-volatile memory (NVM) exploiting single-layer graphene (SLG) and multi-layer graphene (MLG) as channel materials have been fabricated and electrical performance were characterized. The injection of electrons into the trap sites of a triple high-k dielectric stack results in a memory window of more than 11.3V. The entire fabrication process was performed under temperatures below 250°C in order to prevent deformation on low heat budget substrates, such as plastic. The NVGMs are compatible with flat panel display (FPD) fabrication schemes and can be utilized for high-density-memory for flexible electronics.
AB - A non-volatile memory (NVM) exploiting single-layer graphene (SLG) and multi-layer graphene (MLG) as channel materials have been fabricated and electrical performance were characterized. The injection of electrons into the trap sites of a triple high-k dielectric stack results in a memory window of more than 11.3V. The entire fabrication process was performed under temperatures below 250°C in order to prevent deformation on low heat budget substrates, such as plastic. The NVGMs are compatible with flat panel display (FPD) fabrication schemes and can be utilized for high-density-memory for flexible electronics.
UR - https://www.scopus.com/pages/publications/84870724870
UR - https://www.scopus.com/pages/publications/84870724870#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:84870724870
SN - 9781622761906
T3 - Proceedings of the International Display Workshops
SP - 571
EP - 574
BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11
T2 - 18th International Display Workshops 2011, IDW 2011
Y2 - 7 December 2011 through 9 December 2011
ER -
