A novel GaAs metal-semiconductor field-effect transistor (MESFET) with Al0.25Ga0.75As/GaAs multiquantum barrier (MQB) buffer layer and narrow band InAs/graded InGaAs capping layer was demonstrated. The MQB buffer layer can improve the sidegating effect and isolation. The capping layer can perform nonalloy ohmic contact with Ti/Pt/Au metals. Furthermore, the Ti/Pt/Au metals directly contact with GaAs active channel layer can work as Schottky barrier. For the fabrication of this novel MESFET, the thermal alloy and alignment processes can be avoided.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry