Nonalloyed GaAs metal-semiconductor field effect transistor

Ching Ting Lee, Jen Hou Huang, Chang Da Tsai

Research output: Contribution to journalArticlepeer-review


A novel GaAs metal-semiconductor field-effect transistor (MESFET) with Al0.25Ga0.75As/GaAs multiquantum barrier (MQB) buffer layer and narrow band InAs/graded InGaAs capping layer was demonstrated. The MQB buffer layer can improve the sidegating effect and isolation. The capping layer can perform nonalloy ohmic contact with Ti/Pt/Au metals. Furthermore, the Ti/Pt/Au metals directly contact with GaAs active channel layer can work as Schottky barrier. For the fabrication of this novel MESFET, the thermal alloy and alignment processes can be avoided.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalSolid-State Electronics
Issue number1
Publication statusPublished - 2000 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Nonalloyed GaAs metal-semiconductor field effect transistor'. Together they form a unique fingerprint.

Cite this