Abstract
We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH 4) 2S x solution. The resultant Ga/N ratio was decreased. The deposited Ti is in intimate contact with the (NH 4) 2S x-treated n-type GaN layer. As a result, the TiN interlayer, which has a low work function and low electrical resistivity, is formed easily. The nonalloyed ohmic mechanism results from the formation of a TiN interlayer and the creation of nitrogen vacancies due to the nitrogen outdiffusion from the n-type GaN layer. The nonalloyed ohmic behavior of the as-deposited Ti/Al contacts with (NH 4) 2S x-treated GaN layer was associated with Al/Ti/TiN/n-type GaN.
Original language | English |
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Pages (from-to) | 3825-3829 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 92 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2002 Oct 1 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy