Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin

Cheng Jung Lee; Yu Chi Chang; Li Wen Wang; Yeong Her Wang

doi:10.3390/ma11010032

Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin

Cheng Jung Lee, Yu Chi Chang, Li Wen Wang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlO_x layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlO_x layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

Original language	English
Article number	32
Journal	Materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/ma11010032
Publication status	Published - 2017 Dec 26

All Science Journal Classification (ASJC) codes

General Materials Science

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title = "Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin",

abstract = "This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.",

author = "Lee, {Cheng Jung} and Chang, {Yu Chi} and Wang, {Li Wen} and Wang, {Yeong Her}",

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AU - Lee, Cheng Jung

AU - Chang, Yu Chi

AU - Wang, Li Wen

AU - Wang, Yeong Her

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Y1 - 2017/12/26

N2 - This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

AB - This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

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Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin

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