Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate

S. Tong, J. L. Liu, J. Wan, Kang L. Wang

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84 Citations (Scopus)

Abstract

Coherent Ge quantum dots embedded in Si spacing layers were grown on Si substrate by molecular-beam epitaxy in the Stranski-Krastanov mode. Photoluminescence measurement showed a Ge-dot-related peak at 1.46 μm. p-i-n photodiodes with the intrinsic layer containing Ge dots were fabricated, and current-voltage (I-V) measurement showed a low dark current density of 3×10-5A/cm2 at -1 V. A strong photoresponse at 1.3-1.52 μm originating from Ge dots was observed, and at normal incidence, an external quantum efficiency of 8% was achieved at -2.5 V.

Original languageEnglish
Pages (from-to)1189-1191
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number7
DOIs
Publication statusPublished - 2002 Feb 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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