Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm

F. Y. Huang, X. Zhu, M. O. Tanner, K. L. Wang

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)

Abstract

Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

Original languageEnglish
Pages (from-to)566
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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