Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm

F. Y. Huang; X. Zhu; M. O. Tanner; K. L. Wang

doi:10.1063/1.115171

Normal-incidence strained-layer superlattice Ge_0.5Si _0.5/Si photodiodes near 1.3 μm

F. Y. Huang
, X. Zhu
, M. O. Tanner
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

Ge_0.5Si_0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

Original language	English
Pages (from-to)	566
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115171
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115171

Cite this

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title = "Normal-incidence strained-layer superlattice Ge0.5Si 0.5/Si photodiodes near 1.3 μm",

abstract = "Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17\% at 0.85 μm and 1\% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.",

author = "Huang, \{F. Y.\} and X. Zhu and Tanner, \{M. O.\} and Wang, \{K. L.\}",

year = "1995",

doi = "10.1063/1.115171",

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journal = "Applied Physics Letters",

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AU - Huang, F. Y.

AU - Zhu, X.

AU - Tanner, M. O.

AU - Wang, K. L.

PY - 1995

Y1 - 1995

N2 - Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

AB - Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated.

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JF - Applied Physics Letters

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Normal-incidence strained-layer superlattice Ge_0.5Si _0.5/Si photodiodes near 1.3 μm

Abstract

All Science Journal Classification (ASJC) codes

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