Normal incident SiGe/Si multiple quantum well infrared detector

J. S. Park, R. P.G. Karunasiri, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A long-wavelength ( approximately 10- mu m) quantum-well (QW) infrared detector with normal incident detection was fabricated using p-type Si1-xGex/Si multiple QWs. Photocurrent is measured as a function of the incident beam polarization. With a beam polarized parallel to the growth plane (90 degrees polarization, normal incidence), a photocurrent peak is observed at near 7.2 mu m with a full width at half maximum (FWHM) of about 80 meV. On the other hand, when the beam is polarized along the growth direction (0 degrees polarization), a peak is observed at near 8.6 mu m with FWHM of about 80 meV. With the non-optimized detector, the peak photoresponsivity of 0.3 A/W and detectivity of D∗ approximately 1.0 109cm square root Hz/W at 77 K are obtained for both polarizations. The results of normal incident detection demonstrate the feasibility of Si-based long-wavelength IR detectors and focal plane arrays with the advantage of monolithic integration with Si integrated circuits.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages749-752
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91-12-0891-12-11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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