Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF₄ plasma and ozone water oxidization treatment

Engineering & Materials Science

• Ozone water treatment 100%
• Oxide semiconductors 52%
• High electron mobility transistors 51%
• Plasmas 40%
• Oxides 38%
• Metals 28%
• Electric breakdown 14%
• Gate dielectrics 9%
• Gates (transistor) 9%
• Ozone 7%
• Passivation 7%
• Transconductance 7%
• Current density 6%
• Aluminum oxide 6%
• Ions 5%
• Substrates 4%
• Water 3%
• Electric potential 3%
• Costs 2%

Physics & Astronomy

• water treatment 60%
• ozone 48%
• high electron mobility transistors 45%
• metal oxide semiconductors 45%
• oxides 27%
• electrical faults 12%
• transconductance 6%
• barrier layers 6%
• passivity 5%
• costs 4%
• current density 4%
• augmentation 3%
• water 3%
• electric potential 3%
• ions 2%

Chemical Compounds

• Electron Mobility 53%
• Ozone 45%
• Plasma 27%
• Breakdown Voltage 26%
• Transconductance 13%
• Dielectric Material 7%
• Dimension 6%
• Current Density 6%
• Voltage 6%
• Oxide 4%
• Ion 3%