Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Yi Ping Huang, Ching Sung Lee, Wei Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


GaN-based HEMTs feature a lot of superior material properties, including high electron mobility, wide band-gap, and large breakdown field. These properties are very suitable for power electronic applications. However, due to the high two dimensional electron gas (2DEG) density, a conventional GaN HEMT is an inherently normally-on device. Considering safety design in the power electronic systems, high performance normally-off GaN HEMT s are needed [1]. FinFet (tri-gate) structure has recently been applied to GaN HEMTs for the normally-off operation. However, a conventional FinFet (tri-gate) GaN HEMT requires very small channel widths to achieve the normally-off operation. This needs very critical process conditions and could cause the on-resistance (R on ) to be obviouslhy degraded [2]. In this study, an InAlN/GaN fin-MOSHEMT combined with fluorine treatment is demonstrated. It doesn't require very small channel widths to achieve a normally-off HEMT while having excellent performances.

Original languageEnglish
Title of host publication2020 Device Research Conference, DRC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728170473
Publication statusPublished - 2020 Jun
Event2020 Device Research Conference, DRC 2020 - Columbus, United States
Duration: 2020 Jun 212020 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2020 Device Research Conference, DRC 2020
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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