TY - GEN
T1 - Notice of Removal
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
AU - Chavali, Raghu V.K.
AU - Li, Jian V.
AU - Battaglia, Corsin
AU - De Wolf, Stefaan
AU - Gray, Jeffery L.
AU - Alam, Muhammad A.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - Suns-Voc measurements are frequently used to study the intrinsic potential of a solar cell technology, by excluding the parasitic series resistance effects. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the results show a peculiar turn-around at illumination intensities that has been attributed to an extrinsic Schottky contact. In this paper, we demonstrate that this voltage turn-around rather may arise from the heterojunction (HJ), inherent to SHJ solar cell, without having to invoke the Schottky contact assumption. We use numerical simulations to explore the full J-V under different illumination and temperature conditions. Using these J-Vs, we establish the bias, intensity, temperature conditions necessary to observe the voltage turn-around in these cells. We validate the HJ hypothesis using an extensive set of experiments on a high- efficiency SHJ solar cell. Our work establishes Suns-Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in heterojunction devices.
AB - Suns-Voc measurements are frequently used to study the intrinsic potential of a solar cell technology, by excluding the parasitic series resistance effects. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the results show a peculiar turn-around at illumination intensities that has been attributed to an extrinsic Schottky contact. In this paper, we demonstrate that this voltage turn-around rather may arise from the heterojunction (HJ), inherent to SHJ solar cell, without having to invoke the Schottky contact assumption. We use numerical simulations to explore the full J-V under different illumination and temperature conditions. Using these J-Vs, we establish the bias, intensity, temperature conditions necessary to observe the voltage turn-around in these cells. We validate the HJ hypothesis using an extensive set of experiments on a high- efficiency SHJ solar cell. Our work establishes Suns-Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in heterojunction devices.
UR - http://www.scopus.com/inward/record.url?scp=85048483457&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048483457&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366838
DO - 10.1109/PVSC.2017.8366838
M3 - Conference contribution
AN - SCOPUS:85048483457
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1
EP - 3
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 June 2017 through 30 June 2017
ER -