Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/V-s electron mobility for low-temperature substrates

Chang Hong Shen, Jia Min Shieh, Hao Chung Kuo, Jung Y. Huang, Wen Hsien Huang, Chih Wei Hsu, Yu Hsin Lin, Hung Yu Chiu, Huang Yan Jhan, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Chenming Hu, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages31.1.1-31.1.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10-12-0610-12-08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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