Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/V-s electron mobility for low-temperature substrates

Chang Hong Shen; Jia Min Shieh; Hao Chung Kuo; Jung Y. Huang; Wen Hsien Huang; Chih Wei Hsu; Yu Hsin Lin; Hung Yu Chiu; Huang Yan Jhan; Bau Tong Dai; Ching Ting Lee; Ci Ling Pan; Chenming Hu; Fu Liang Yang

doi:10.1109/IEDM.2010.5703455

Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates

Chang Hong Shen, Jia Min Shieh, Hao Chung Kuo, Jung Y. Huang, Wen Hsien Huang, Chih Wei Hsu, Yu Hsin Lin, Hung Yu Chiu, Huang Yan Jhan, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Chenming Hu, Fu Liang Yang

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm²/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	31.1.1-31.1.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703455
Publication status	Published - 2010 Dec 1
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country	United States
City	San Francisco, CA
Period	10-12-06 → 10-12-08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703455

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Shen, C. H., Shieh, J. M., Kuo, H. C., Huang, J. Y., Huang, W. H., Hsu, C. W., Lin, Y. H., Chiu, H. Y., Jhan, H. Y., Dai, B. T., Lee, C. T., Pan, C. L., Hu, C., & Yang, F. L. (2010). Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 31.1.1-31.1.4). [5703455] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703455

Shen, Chang Hong ; Shieh, Jia Min ; Kuo, Hao Chung ; Huang, Jung Y. ; Huang, Wen Hsien ; Hsu, Chih Wei ; Lin, Yu Hsin ; Chiu, Hung Yu ; Jhan, Huang Yan ; Dai, Bau Tong ; Lee, Ching Ting ; Pan, Ci Ling ; Hu, Chenming ; Yang, Fu Liang. / Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. pp. 31.1.1-31.1.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/V-s electron mobility for low-temperature substrates",

abstract = "For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.",

author = "Shen, {Chang Hong} and Shieh, {Jia Min} and Kuo, {Hao Chung} and Huang, {Jung Y.} and Huang, {Wen Hsien} and Hsu, {Chih Wei} and Lin, {Yu Hsin} and Chiu, {Hung Yu} and Jhan, {Huang Yan} and Dai, {Bau Tong} and Lee, {Ching Ting} and Pan, {Ci Ling} and Chenming Hu and Yang, {Fu Liang}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/IEDM.2010.5703455",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "31.1.1--31.1.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Shen, CH, Shieh, JM, Kuo, HC, Huang, JY, Huang, WH, Hsu, CW, Lin, YH, Chiu, HY, Jhan, HY, Dai, BT, Lee, CT, Pan, CL, Hu, C & Yang, FL 2010, Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703455, Technical Digest - International Electron Devices Meeting, IEDM, pp. 31.1.1-31.1.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10-12-06. https://doi.org/10.1109/IEDM.2010.5703455

Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates. / Shen, Chang Hong; Shieh, Jia Min; Kuo, Hao Chung; Huang, Jung Y.; Huang, Wen Hsien; Hsu, Chih Wei; Lin, Yu Hsin; Chiu, Hung Yu; Jhan, Huang Yan; Dai, Bau Tong; Lee, Ching Ting; Pan, Ci Ling; Hu, Chenming; Yang, Fu Liang.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 31.1.1-31.1.4 5703455 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/V-s electron mobility for low-temperature substrates

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Kuo, Hao Chung

AU - Huang, Jung Y.

AU - Huang, Wen Hsien

AU - Hsu, Chih Wei

AU - Lin, Yu Hsin

AU - Chiu, Hung Yu

AU - Jhan, Huang Yan

AU - Dai, Bau Tong

AU - Lee, Ching Ting

AU - Pan, Ci Ling

AU - Hu, Chenming

AU - Yang, Fu Liang

PY - 2010/12/1

Y1 - 2010/12/1

N2 - For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.

AB - For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 31.1.1-31.1.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

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Shen CH, Shieh JM, Kuo HC, Huang JY, Huang WH, Hsu CW et al. Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm²/V-s electron mobility for low-temperature substrates. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 31.1.1-31.1.4. 5703455. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703455