Novel a-IGZO pixel circuit adopting external circuit for use in 3-D AMOLED displays

Ming Xun Wang, Po Syun Chen, Chih Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new stereoscopic three-dimensional (3-D) active-matrix organic light-emitting diode (AMOLED) pixel circuit composed of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) is presented in this paper. The proposed pixel circuit has simple structure by adopting external circuit shared in one column and successfully compensates for the threshold voltage variation of a-IGZO TFTs. Therefore, the aperture ratio and brightness uniformity of displays can be ameliorated effectively. Simulation results show that the relative current error rates of the proposed pixel circuit are less than 7% over the entire input data range.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages69-71
Number of pages3
ISBN (Electronic)9784990875312
DOIs
Publication statusPublished - 2016 Aug 15
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 2016 Jul 62016 Jul 8

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period16-07-0616-07-08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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