Novel a-Si:H amoled pixel circuit to ameliorate oled luminance degradation by external detection

Chih Lung Lin; Chia Che Hung; Wen Yen Chang; Kuan Wen Chou; Cheng Yan Chuang

doi:10.1109/LED.2011.2167592

Novel a-Si:H amoled pixel circuit to ameliorate oled luminance degradation by external detection

Chih Lung Lin, Chia Che Hung, Wen Yen Chang, Kuan Wen Chou, Cheng Yan Chuang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.

Original language	English
Article number	6044701
Pages (from-to)	1716-1718
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2167592
Publication status	Published - 2011 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2167592

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title = "Novel a-Si:H amoled pixel circuit to ameliorate oled luminance degradation by external detection",

abstract = "This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.",

author = "Lin, {Chih Lung} and Hung, {Chia Che} and Chang, {Wen Yen} and Chou, {Kuan Wen} and Chuang, {Cheng Yan}",

note = "Funding Information: Manuscript received July 19, 2011; revised August 26, 2011; accepted August 27, 2011. Date of publication October 13, 2011; date of current version November 23, 2011. This work was supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 100-2221-E-006-046) of Taiwan. The review of this letter was arranged by Editor P. K.-L. Yu.",

year = "2011",

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doi = "10.1109/LED.2011.2167592",

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AU - Lin, Chih Lung

AU - Hung, Chia Che

AU - Chang, Wen Yen

AU - Chou, Kuan Wen

AU - Chuang, Cheng Yan

N1 - Funding Information: Manuscript received July 19, 2011; revised August 26, 2011; accepted August 27, 2011. Date of publication October 13, 2011; date of current version November 23, 2011. This work was supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 100-2221-E-006-046) of Taiwan. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2011/12

Y1 - 2011/12

N2 - This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.

AB - This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.

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Novel a-Si:H amoled pixel circuit to ameliorate oled luminance degradation by external detection

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