Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan Kuin Su, Jia Rong Chang, Yan-Ten Lu, Chuing Liang Lin, Kuo Ming Wu, Zheng Xian Wu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.

Original languageEnglish
Pages (from-to)146-148
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number4
DOIs
Publication statusPublished - 2000 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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