Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan Kuin Su; Jia Rong Chang; Yan Ten Lu; Chuing Liang Lin; Kuo Ming Wu; Zheng Xian Wu

doi:10.1109/55.830963

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan Kuin Su, Jia Rong Chang, Yan Ten Lu, Chuing Liang Lin, Kuo Ming Wu, Zheng Xian Wu

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We demonstrate a novel Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm² were obtained at room temperature.

Original language	English
Pages (from-to)	146-148
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/55.830963
Publication status	Published - 2000 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.830963

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abstract = "We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.",

author = "Su, {Yan Kuin} and Chang, {Jia Rong} and Lu, {Yan Ten} and Lin, {Chuing Liang} and Wu, {Kuo Ming} and Wu, {Zheng Xian}",

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AU - Su, Yan Kuin

AU - Chang, Jia Rong

AU - Lu, Yan Ten

AU - Lin, Chuing Liang

AU - Wu, Kuo Ming

AU - Wu, Zheng Xian

PY - 2000/4

Y1 - 2000/4

N2 - We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.

AB - We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.

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DO - 10.1109/55.830963

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Abstract

All Science Journal Classification (ASJC) codes

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