We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering