Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs

Kartika Chandra Sahoo, Chun Wei Chang, Yuen Yee Wong, Tung Ling Hsieh, Edward Yi Chang, Ching Ting Lee

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7 Citations (Scopus)

Abstract

The thermal stability of the Cu/Cr/Ge/Pd/n +-GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier to block copper diffusion into GaAs. After thermal annealing at 350°C, the specific contact resistance of the copper-based ohmic contact Cu/Cr/Ge/Pd was measured to be (5.1 ± 0.6) × 10 -7 Ω cm 2. Diffusion behaviors of these films at different annealing temperatures were characterized by metal sheet resistance, X-ray diffraction data, Auger electron spectroscopy, and transmission electron microscopy. The Cu/Cr/Ge/Pd contact structure was very stable after 350°C annealing. However, after 400°C annealing, the reaction of copper with the underlying layers started to occur and formed Cu 3Ga, Cu 3As, Cu 9Ga 4, and Ge 3Cu phases due to interfacial instability and copper diffusion.

Original languageEnglish
Pages (from-to)901-904
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Sahoo, K. C., Chang, C. W., Wong, Y. Y., Hsieh, T. L., Chang, E. Y., & Lee, C. T. (2008). Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs. Journal of Electronic Materials, 37(6), 901-904. https://doi.org/10.1007/s11664-008-0398-3