NOVEL DEVICES BY Si-BASED MOLECULAR BEAM EPITAXY.

Silicon Molecular Beam Epitaxy (MBE) is becoming a viable technique for growing epitaxial Si-based films. Using MBE, unique features can be incorporated in epitaxial growth and problems often encountered in conventional growth technology may be alleviated. Incorporating these features, the growth of several types of superlattices for device application in Si-based materials has been successfully demonstrated. Recent progress in growing abruptly doped Si, uniform CoSi//2/Si, and Ge//xSi//1// minus //x/Si films, as well as in fabricating devices using these materials, is described. In particular, problems and solutions for growing device quality Si-based films by MBE are contrasted with those of III-V compounds. Examples ranging from the improvement of conventional devices to the development of new high speed and high frequency devices are discussed.