Novel direct-tunneling-current (DTC) method for channel length extraction beyond sub-50nm gate CMOS

Sungkwon Hong, Yaohui Zhang, Yuhao Luo, Tomislav Suligoj, Seong Dong Kim, Jason C.S. Woo, Ruigang Li, Byoung Woon Min, Bruce Hradsky, Anne Vandooren, Bich Yen Nguyen, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A novel method for accurate gate length extraction has been developed using direct tunneling current (DTC) through thin gate oxide. Applied to decanano CMOS devices, the proposed method is verified to be free from a severe assumption of unified effective mobility that is one of limitations of conventional method to sub-0.1μm. The DTC method is also insensitive to doping concentration and gate oxide thinning effect at the corner regions. In addition, we have studied the channel length dependence on gate line-edge roughness by comparing the DTC method and the conventional channel current method.

Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
Publication statusPublished - 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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