Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor

Ching Sung Lee, Wei-Chou Hsu, Hir Ming Shieh, Jan Shing Su, Shin Yuh Jain, Wei Lin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor (HFET) with field-effect transistor mode (FET mode) and pronounced N-shaped negative-differential resistance mode (NDR mode) characteristics has been studied by low-pressure metalorganic chemical vapor deposition. By using the shallow ohmic source contact, an NDR mode HFET with a peak-to-valley current ratio of 5.8 (5.4) at 300 (77) K can be obtained. When the source is with deep ohmic contact, an FET mode HFET with a maximum extrinsic transconductance of 216 (250) mS/mm at 300 (77) K, as well as a high-breakdown voltage up to 40 V can be achieved for a gate length of 1.5 μm by using the high-energy gap and high-barrier height (>0.73 eV) In0.34Al0.66As0.85Sb0.15 Schottky layer.

Original languageEnglish
Pages (from-to)1635-1640
Number of pages6
JournalSolid-State Electronics
Volume44
Issue number9
DOIs
Publication statusPublished - 2000 Sep 1

Fingerprint

High electron mobility transistors
field effect transistors
Field effect transistors
Low pressure chemical vapor deposition
Ohmic contacts
Metallorganic chemical vapor deposition
Transconductance
Electric breakdown
Energy gap
transconductance
electrical faults
metalorganic chemical vapor deposition
valleys
electric contacts
low pressure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, Ching Sung ; Hsu, Wei-Chou ; Shieh, Hir Ming ; Su, Jan Shing ; Jain, Shin Yuh ; Lin, Wei. / Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor. In: Solid-State Electronics. 2000 ; Vol. 44, No. 9. pp. 1635-1640.
@article{f2497c4a148a42daa20f2d9a9053b99c,
title = "Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor",
abstract = "A dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor (HFET) with field-effect transistor mode (FET mode) and pronounced N-shaped negative-differential resistance mode (NDR mode) characteristics has been studied by low-pressure metalorganic chemical vapor deposition. By using the shallow ohmic source contact, an NDR mode HFET with a peak-to-valley current ratio of 5.8 (5.4) at 300 (77) K can be obtained. When the source is with deep ohmic contact, an FET mode HFET with a maximum extrinsic transconductance of 216 (250) mS/mm at 300 (77) K, as well as a high-breakdown voltage up to 40 V can be achieved for a gate length of 1.5 μm by using the high-energy gap and high-barrier height (>0.73 eV) In0.34Al0.66As0.85Sb0.15 Schottky layer.",
author = "Lee, {Ching Sung} and Wei-Chou Hsu and Shieh, {Hir Ming} and Su, {Jan Shing} and Jain, {Shin Yuh} and Wei Lin",
year = "2000",
month = "9",
day = "1",
doi = "10.1016/S0038-1101(00)00118-0",
language = "English",
volume = "44",
pages = "1635--1640",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor. / Lee, Ching Sung; Hsu, Wei-Chou; Shieh, Hir Ming; Su, Jan Shing; Jain, Shin Yuh; Lin, Wei.

In: Solid-State Electronics, Vol. 44, No. 9, 01.09.2000, p. 1635-1640.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor

AU - Lee, Ching Sung

AU - Hsu, Wei-Chou

AU - Shieh, Hir Ming

AU - Su, Jan Shing

AU - Jain, Shin Yuh

AU - Lin, Wei

PY - 2000/9/1

Y1 - 2000/9/1

N2 - A dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor (HFET) with field-effect transistor mode (FET mode) and pronounced N-shaped negative-differential resistance mode (NDR mode) characteristics has been studied by low-pressure metalorganic chemical vapor deposition. By using the shallow ohmic source contact, an NDR mode HFET with a peak-to-valley current ratio of 5.8 (5.4) at 300 (77) K can be obtained. When the source is with deep ohmic contact, an FET mode HFET with a maximum extrinsic transconductance of 216 (250) mS/mm at 300 (77) K, as well as a high-breakdown voltage up to 40 V can be achieved for a gate length of 1.5 μm by using the high-energy gap and high-barrier height (>0.73 eV) In0.34Al0.66As0.85Sb0.15 Schottky layer.

AB - A dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor (HFET) with field-effect transistor mode (FET mode) and pronounced N-shaped negative-differential resistance mode (NDR mode) characteristics has been studied by low-pressure metalorganic chemical vapor deposition. By using the shallow ohmic source contact, an NDR mode HFET with a peak-to-valley current ratio of 5.8 (5.4) at 300 (77) K can be obtained. When the source is with deep ohmic contact, an FET mode HFET with a maximum extrinsic transconductance of 216 (250) mS/mm at 300 (77) K, as well as a high-breakdown voltage up to 40 V can be achieved for a gate length of 1.5 μm by using the high-energy gap and high-barrier height (>0.73 eV) In0.34Al0.66As0.85Sb0.15 Schottky layer.

UR - http://www.scopus.com/inward/record.url?scp=0034272884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034272884&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(00)00118-0

DO - 10.1016/S0038-1101(00)00118-0

M3 - Article

VL - 44

SP - 1635

EP - 1640

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -