Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, Cheng Liang Hsu

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)

Abstract

Vertical well-aligned zinc oxide (ZnO) nanowires were grown on p-GaN/ sapphire to produce a p-n heterojunction using the vapor-liquid-solid (VLS) process. A p-n heterojunction in an ultraviolet photodetector was successfully demonstrated. The length of ZnO nanowires on the p-GaN epilayer was in the range 0.7-1 μm and the diameter was in the range 80-100 nm. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365 nm), the current was almost 15 times that in the dark current at -5 V. Continuous measurements indicate the reproducibility and stability of this heterojunction photodetector.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalChemical Physics Letters
Volume476
Issue number1-3
DOIs
Publication statusPublished - 2009 Jul 7

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

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