Abstract
Vertical well-aligned zinc oxide (ZnO) nanowires were grown on p-GaN/ sapphire to produce a p-n heterojunction using the vapor-liquid-solid (VLS) process. A p-n heterojunction in an ultraviolet photodetector was successfully demonstrated. The length of ZnO nanowires on the p-GaN epilayer was in the range 0.7-1 μm and the diameter was in the range 80-100 nm. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365 nm), the current was almost 15 times that in the dark current at -5 V. Continuous measurements indicate the reproducibility and stability of this heterojunction photodetector.
Original language | English |
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Pages (from-to) | 69-72 |
Number of pages | 4 |
Journal | Chemical Physics Letters |
Volume | 476 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2009 Jul 7 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
- Physical and Theoretical Chemistry