Novel GaAs current-injection negative differential resistance transistor

K. F. Yarn, Y. H. Wang, C. Y. Chang, C. S. Chang

Research output: Contribution to journalArticlepeer-review

Abstract

GaAs current-injection negative differential resistance transistors using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy are presented. For p+ with a sheet concentration of 1013 cm-2, a negative differential resistance region is revealed for a base current IB<100 μA. The peak to valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When IB>=100 μA, the proposed device operates as a conventional bipolar transistor.

Original languageEnglish
Pages (from-to)72-74
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Volume1
Issue number2
DOIs
Publication statusPublished - 1990 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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