TY - JOUR
T1 - Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
AU - Lee, Ching Ting
AU - Lee, Hsin Ying
AU - Lin, Hao Hsiung
PY - 2002/10
Y1 - 2002/10
N2 - We present a novel GaAs metal-semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved.
AB - We present a novel GaAs metal-semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved.
UR - http://www.scopus.com/inward/record.url?scp=0036819379&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036819379&partnerID=8YFLogxK
U2 - 10.1143/jjap.41.5937
DO - 10.1143/jjap.41.5937
M3 - Article
AN - SCOPUS:0036819379
SN - 0021-4922
VL - 41
SP - 5937
EP - 5940
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10
ER -