Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

Original languageEnglish
Pages (from-to)1157-1159
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number12
DOIs
Publication statusPublished - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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