Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn; Y. H. Wang; C. Y. Chang

doi:10.1063/1.100747

Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn
, Y. H. Wang
, C. Y. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A three-terminal n⁺-i-δp⁺-i-n⁺ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

Original language	English
Pages (from-to)	1157-1159
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	12
DOIs	https://doi.org/10.1063/1.100747
Publication status	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100747

Cite this

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title = "Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy",

abstract = "A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.",

author = "Yarn, \{K. F.\} and Wang, \{Y. H.\} and Chang, \{C. Y.\}",

year = "1989",

doi = "10.1063/1.100747",

language = "English",

volume = "54",

pages = "1157--1159",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Inc.",

number = "12",

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T1 - Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Chang, C. Y.

PY - 1989

Y1 - 1989

N2 - A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

AB - A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

UR - https://www.scopus.com/pages/publications/36549096792

UR - https://www.scopus.com/pages/publications/36549096792#tab=citedBy

U2 - 10.1063/1.100747

DO - 10.1063/1.100747

M3 - Article

AN - SCOPUS:36549096792

SN - 0003-6951

VL - 54

SP - 1157

EP - 1159

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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