Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode

Xia Guo, Guangdi Shen, Guohong Wang, Xuezhong Wang, Jinyu Du, Guo Gao, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15° angle cap.

Original languageEnglish
JournalScience in China, Series E: Technological Sciences
Volume46
Issue number2
DOIs
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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