Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

T. K. Carns, X. Zheng, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1994 Dec 111994 Dec 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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