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Novel Magnetic Tunneling Junction Memory Cell with Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect
Lang Zeng, Tianqi Gao, Deming Zhang, Shouzhong Peng, Lezhi Wang, Fanghui Gong, Xiaowan Qin, Mingzhi Long, Youguang Zhang, Kang L. Wang, Weisheng Zhao
Research output: Contribution to journal › Article › peer-review
6
Citations
(Scopus)