NOVEL MEASUREMENTS OF ELECTRIC FIELD ENHANCED CARRIER EMISSION OF DEFECTS IN SILICON.

Z. F. Guan, G. P. Li, K. L. Wang, F. Chang

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages491-498
Number of pages8
Publication statusPublished - 1983

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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