| Original language | English |
|---|---|
| Pages | 491-498 |
| Number of pages | 8 |
| Publication status | Published - 1983 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
NOVEL MEASUREMENTS OF ELECTRIC FIELD ENHANCED CARRIER EMISSION OF DEFECTS IN SILICON.
Z. F. Guan, G. P. Li, K. L. Wang, F. Chang
Research output: Contribution to conference › Paper › peer-review
1
Citation
(Scopus)