Abstract
One of the most popular techniques in used to produce artificial structure of quantum wires with sub-100-nm features is nanofabrication. This technique involves the formation of a pattern on material and the transfer of this pattern to form nanometer-sized features. In general, the pattern is formed by selective irradiation of a photoresist, using electrons, ions, or ultraviolet light. The patterned regions of the resist are then dissolved in a specific solvent. The final nanoscale features are formed in the underlying material by the use of dry etching techniques.
| Original language | English |
|---|---|
| Pages (from-to) | 13-19 |
| Number of pages | 7 |
| Journal | MRS Bulletin |
| Volume | 24 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1999 Aug |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Physical and Theoretical Chemistry