This brief reports, for the first time, an oxide-passivated AlGaN/GaN high electron mobility transistor by using the hydrogen peroxide (H2O 2) treatment. Characterizations by using electron spectroscopy for chemical analysis and transmission electron microscopy have been performed to verify the formation of surface oxide on the AlGaN barrier layer. The present design has demonstrated superior improvements of 41% in the maximum drain/source current density IDS, max, 39% in the drain/source saturation current density at zero gate bias IDSS0, 47% in the maximum extrinsic transconductance gm, max, 53.2% in the two-terminal gate/drain breakdown voltage BVGD, 36% in the cutoff frequency fT, and 20% in the maximum oscillation frequency f\max, as compared with an unpassivated conventional device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering